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Modern wireless systems demand increasing performance from power amplifiers (PAs) in terms of output power and efficiency. Due to the large number of transistor fingers used in such applications, distributed effects have to be taken into account when designing circuits for high-power applications. In this paper, a 50 W class-E power amplifier is designed based on a GaN HEMT powerbar. The performance...
This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequencies (8-12 GHz) on three-inch s.i. SiC substrates. Dual-stage MMICs in microstrip transmission-line technology yield a power-added efficiency of ??40% at 8.56 GHz for a power level of ??11 W. A single-stage MMIC yields a PAE of ??55% with 6 W of output power at VDS= 20 V. The related mobile communication...
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