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Direct RF undersampling technique has been focused to realize compact and low power consumption receiver. This architecture does not require the LO section and downconverter, but it requires relatively high gain LNA. In this paper, we investigate the usage of power switching (intermittent-mode) LNA to reduce the power consumption. When we simply apply the intermittent-mode LNA, the SNR of the RF undersampling...
We have developed a high speed gate switching type Ku-band CMOS amplifier for direct RF undersampling receiver. This amplifier will synchronize its d.c. power switch timing to the sampling clock of the direct RF undersampling receiver. For Ku-band VSAT application, we designed the sampling clock frequency of undersampling receiver as 600 MHz, therefore the power switching time (Turn-On Time) of less...
Heterogeneous wireless systems such as a combination of mobile broadband wireless access (MBWA) and wireless local area network (WLAN) are candidates to attain higher throughput and wide coverage in the next generation mobile communication systems. A multimode receiver to demodulate signals with multiple air interfaces is required in the heterogeneous systems. In this paper, we discuss an implementation...
A 5 GHz-band direct digital radio frequency (RF) modulator using current-mode digital-to-analog converter (DAC) with idle current is proposed and fabricated in 90-nm complementary metal oxide semiconductor (CMOS) process. Since the proposed modulator directly converts digital base band (BB) parallel input signal into RF signal, small die size and low dc operation can be achieved. To reduce the higher...
We verifid possibility of high sampling rate and lower power consumption current mode ADC that focused on the most high-speed operation for millimeter-wave broad-band wireless terminal such as wireless personal area network (WPAN). A 5 bit 1 giga-samples-per-second (GS/s) current mode pipeline ADC has been designed and fabricated in 90 nm Si complementary metal oxide semiconductor (CMOS) process....
90 nm Si-CMOS high power handling Transmit/Receive (T/R) Switch is proposed for 60 GHz wireless applications. By adopting series and shunt FETs circuit configuration and by employing large FET gate width of 320 μm, high transmit power handling capability is achieved. Since the use of large FET gate width degrades the insertion loss and isolation in the receive mode, a microstrip line is connected...
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