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By using type-II absorption-collector interface and graded-bandgap collector in UTC-PDs for zero-bias operation, such photodiode achieves record 3-dB O-E bandwidth (140 GHz) and sub-THz output power (−13.9dBm at 160GHz) among all the reported zero-bias photodiodes.
The design, analysis, and demonstration of flip-chip bonding packaged uni-traveling-carrier photodiodes (UTC-PDs) with THz (dc to 315 GHz) 3-dB bandwidth and high-power performance are reported. The high-frequency roll-off (up to 0.4 THz) of the flip-chip bonding structure and device heating under high power operation are both minimized through properly downscaling the area of the bonding pad and...
UTC-PDs with novel collector design, flip-chip package, and ultra-wide bandwidth (315GHz) are successfully demonstrated. Under optical femtosecond pulse train illumination with THz repetition rate, it achieves record-high maximum CW output power (1.04 mW) at 280GHz operation.
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