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In this work, the influence of the Ge amount at source on transistor efficiency and intrinsic voltage gain of vertical gate all around TFET is experimentally evaluated, comparing three different source compositions. The reference transistor has a source of 100% of Si, and the studied devices have 27% and 100% of Ge at the source. The increase of the Ge amount at source enhances the tunneling current,...
In this work, the impact of the diameter on vertical nanowire Tunnel FETs analog parameters is evaluated experimentally and by numerical simulation, comparing two different source compositions, one with Si and another with Si73Ge27. The SiGe source device presents a higher tunneling current when compared with the Si source device, resulting in an increase of both transconductance (gm) and output conductance...
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