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Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·1016 – 1·1020 cm−3 are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient...