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Plasmonic nanolasers have made rapid progress in recent years, with room temperature lasing being achieved in the ultra-violet to visible wavelength range using ZnO, GaN and CdS semiconductors. However, the binding energy of excitons for semiconductors such as GaAs that emit in the technologically important near infrared region is insufficient to be stable at room temperature. Quantum dots act as...
We demonstrated the direct modulation in InAs/GaAs quantum dot (QD) lasers on Si. The Fabry-Pérot QD laser was integrated on Si by direct bonding method, and a cavity was formed by the as-cleaved facets without HR/AR coatings. The bonded laser was operated at room temperature with a threshold current of 40 mA and a maximum output power of 30 mW (single facet). A 6 Gbps non-return-to-zero (NRZ) signal...
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