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Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity although SiGe has the better second-order behaviour. The linearity is discussed with respect to the requirements of point-to-point radio and for the first time, to the authors' knowledge, an explanation is...
This paper presents the performance of a first pass design W-band low noise amplifier MMIC, based on coplanar waveguide (CPW) technology, and utilising 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 1.4 mm2, this two-stage LNA achieves an average small signal gain of 12 dB between 80 and 100 GHz. The measured noise figure averages 5 dB up to 94 GHz. To the author...
A 30 to 40 GHz receiver fabricated in SiGe is presented. The receiver contains an LO-tripler-amplifier, balanced mixer and LNA. Measured data is presented for the complete receiver and for the LO tripler-amplifier subcircuit. Comparisons are made with simulation. The receiver has measured mid-band conversion gain of 18 dB, IIP3 of −10 dBm and IIP5 of −14 dBm.
A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The receiver's measured gain is 12 dB with an image rejection exceeding 10 dB, an IIP2 of 17 dBm and IIP3...
A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth...
A packaged up-converter has been developed for the ETSI 42 GHz point-to-point radio band. The MMIC contains an LO-doubler-buffer amplifier, an image-reject balanced mixer and an RF variable gain amplifier. The up-converter has 10 dB conversion gain, 15 dB image rejection, 15 dB of gain control, 15 dBm IIP3 and 50 dB LO-to-RF isolation in the mixer. The up-converter consumes less than 1 watt DC represents...
A Q band doubler and a self-biased V band doubler are presented. The Q band doubler has an output power of 18 dBm and a PAE of 14% which is the highest PAE reported to date at this frequency to the authors' knowledge. The V band doubler produces 16 dBm near its band centre. The doublers are key subcircuits for a Q band receiver with 11 dB gain, IIP3 of 5 dBm and noise figure of approximately 3 dB,...
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