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We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach–Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 μm light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO3 transmitter with both a monolithic metal–semiconductor–metal receiver...
A silicon microring modulator with independent resonance and coupling tunability is monolithically integrated with a stacked CMOS driver. At 25Gbps, the OMA is −1.9dBm, the extinction ratio is 3.5dB, and the excess loss is 2.6dB.
Silicon-on-insulator microring modulators with integrated Mach-Zehnder interferometer couplers exhibiting drive voltages near 1 V, modulation insertion loss < 1 dB, extinction ratios as large as 16 dB, and low chirp are demonstrated.
A silicon microring modulator is demonstrated utilizing IBM CMOS Silicon Nanophotonics technology, achieving 30Gbps operation at a power consumption of ∼335fJ/bit in a device suitable for monolithic integration.
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