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We explore the intrinsic loss in power switches seen when they undergo charging and discharging of their output capacitance. The intrinsic loss occurs even if switching is carried out at zero current and no on-state current is conducted, and accidental turn-on is avoided. The intrinsic loss cannot be eliminated by using soft-switching schemes and essentially sets an upper limit for the switching speed...
The SiC normally-on JFET is a new member in the family of power devices. It is reliable and robust under high-temperature and high-voltage harsh operatioing conditions due to its pn-junction gate control and the excellent physical and electrical properties of Silicon Carbide. At present, 1200V SiC normally-on JFETs are commercially available and higher voltage JFETs are still under development. There...
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