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This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 °C show a considerable high leakage current, those with nonannealed Al/Ti gate contacts exhibit...
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