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We demonstrate the first Bragg-grating-based 4-channel O-band (de-)multiplexer fabricated using 193nm lithography on submicron-SOI with small features below 140nm.
Low-power, high-speed optical interconnects are essential to future high-performance computers and data centers for the cloud. Using CMOS-compatible silicon photonics processes, we have developed integrated photonic devices, such as 80 Gb/s optical modulators with ultralow power consumption at the level of femtojoule per bit and O-band on-chip wavelength multiplexers. These devices are promising for...
We propose an analytical time-domain model for microring and microdisk modulators, which considers both their electrical and optical properties. Theory of the dynamics of microring/microdisk is discussed, and general solutions to the transfer matrix representation are presented. Both static and dynamic predictions from the model are compared to measurement results to demonstrate the accuracy of our...
We experimentally demonstrate the ability to couple any polarization state from a fiber to the TE-mode of a single waveguide in an integrated silicon photonics circuit. We achieved this by combining a 2D-grating coupler and two tunable Mach-Zehnder Interferometers (MZI) into a polarization adapter. We obtain less than ±0.6 dB standard deviation across all input polarization states at a wavelength...
We demonstrate an integrated tunable silicon band-pass filter with low in-band ripples of 0.3 dB, a high contrast of 55 dB, and no free-spectral range. A record bandwidth tuning over 670 GHz was achieved.
We propose and experimentally demonstrate a broadband, frequency agile RF-photonic notch filter based on a waveguide Bragg grating on silicon, realized with CMOS compatible process via a multi-project wafer (MPW) run. The resulting RF filter shows a seamless tuning over 20 GHz of the central RF frequency of the notch, without changes in the shape of the filter response.
We propose an analytical, time-domain model for microring modulators, which encompasses pn-junction and resonator dynamics. It shows excellent agreement with experiment for high frequency operation beyond 20 GHz. Pulse-amplitude modulation is predicted for up to 80 Gb/s.
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