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A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than −30.8dB...
This paper describes a novel kind of filter at Ka-band on silicon substrate, which is based on the substrate integrated waveguide (SIW) design and MEMS fabrication process. Inductively coupled plasma (ICP) deep etching is used to form the square via-holes of SIW cavities. A 5-pole micromachined filter is made from rectangular cavities integrated into a silicon substrate and is fed by coplanar waveguide(CPW)...
A 3-port MEMS switch for MEMS phase shifter is present, with bias electrodes physically insulated from RF/microwave transmission line, which are designed for lower crosstalk between bias and microwave signal. The RF/microwave performances of these switches are optimized by 2.5 dimension electromagnetic (EM) field-solvers of ADS/Momentum. The mechanical structure of the switch is optimized by electromechanical...
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