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In this paper, electroplated Cu was used as substrate to grow graphene by chemical vapor deposition (CVD) with a mixture gas of methane, hydrogen and argon. The different electroplated Cu gain size after annealing was studied. We present the growth temperature, growth time and methane concentration are key parameters that affect the structural perfection of graphene.
In this paper, a traditional chemical vapor deposition method for synthesis of single-crystal graphene domains on copper foils was optimized by modulating the growth parameters. This provided us a low-cost and high-yield method for large-area single-crystal graphene domain growth. By this way, single-crystal graphene domains larger than 10μm were synthesized with a gas flow of 1000sccm argon, 40sccm...
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