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Ba0.4Sr0.6TiO3 (BST) thin films were prepared by spin-coating technique and deposited on either Pt/TiO2/SiO2/Si (Pt/Si) substrate or silicon buffered by a lanthanum nickel oxide buffer layer (LNO/Si). X-ray diffraction and scanning electron microscopy showed that the BST films were crack free, compact and crystallized with a single perovskite structure. The effects of bottom electrodes on dielectric...
We report a highly transparent bipolar resistive random access memory device fabricated by radio frequency magnetron sputtering based on Zr0.5Hf0.5O2 films with an amorphous semiconducting In–Ga–Zn–O films as electrode. The fabricated device gets a high average transmittance of 87.1% in the visible region. We examine the conduction mechanism and calculated the Schottky barrier height at room temperature...
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