The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We explore the possibilities of plasma-wave devics using multiple channel HEMT (high electron mobility transistor) structures. The multiple channel HEMTs are studied using rigorous analytical methods and full-wave-hydrodynamic numerical models. Using the electromagnetic field profiles and hydrodynamic conductivity, we first derive dispersion relations for the plasma-wave propagation within double...
In this paper, we show how plasma-wave instability in an asymmetrically biased ungated InGaAs high-electron mobility transistor (HEMT) leads to terahertz emissions. Numerical calculations are provided using a new Maxwell-hydrodynamic solver. Using this solver, an accurate plasma-wave model is presented, accounting for nonuniform surroundings and finite dimensions of the 2D electron gas (2DEG) layer...
A high electron mobility transistor (HEMT) configuration is proposed using multiple mutually coupled 2DEG layers to detect plasma waves at room temperatures. We show a 6 dB improvements in the transmission spectra, as opposed to single 2DEG layer, using a 4 channel HEMT configuration. To conduct this analysis, we developed and present a full-wave numerical model for self-consistent solution of the...
Generation of terahertz signals using solid-state devices has yet to be demonstrated above 1 THz. This paper presents modeling and optimization of a plasma mode High Electron Mobility Transistor (HEMT) for operation beyond 3 THz. In designing this structure, we examine geometrical and electrical parameters and their impact on the resonance frequency. Preliminary results show that as much as 20% of...
There has been growing interest in all-electronic sources in the terahertz frequencies. A compact THz source is obtainable, if plasma-oscillations in the 2DEG of a high electron mobility transistor (HEMT) are utilized. With this goal in mind, we develop a numerical tool which models such oscillations. We use hydrodynamic equations to model drifting plasma in the 2DEG, whereas the surrounding environment...
Full-wave analysis has been extensively used in the past to model traveling-wave transistors. However, no design has incorporated resonant tunneling diode structures to assess their resonance and gain. In this investigation, finite element (frequency-domain) and finite-difference time-domain techniques are used to model the performance of a HEMT/RTD integrated structure. These structures are unique...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.