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This work reports recent improvements in structural characterization by high resolution x-ray diffraction (HRXRD) performed on multiple quantum well (MQW) heterostructures grown on InP substrates. A new diffractometer, providing a sub-millimeter x-ray spot and allowing accurate lateral positioning on the sample, was tested. We compared two set of samples: (i) one is the as-grown material deposited...
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.
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