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Recent improvements in fine-line technology have resulted in silicon metal oxide semiconductor field-effect transistors (MOSFETs) with channel lengths between 0.2 and 0.8 μm. We have measured the low-frequency noise in these transistors and find it to be smaller than that in comparable GaAs-metal Schottky valve field-effect transistors (MESFETs). Theoretical considerations on the FET noise and experimental...
Logic circuits made with a new scaled n-channel MOSFET technology have been clocked at gigabit rates. This new nMOS technology employs X-ray lithography and reactive ion etching to obtain 1 ??m features and submicron channel lengths. Two ring oscillator designs are presentea: (1) circuits witra propagation aelays of 30 ps and power-delay products of 44 fJ and (2) circuits with power-delay proaucts...
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