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The transfer‐free direct growth of high‐performance materials and devices can enable transformative new technologies. Here, room‐temperature field‐effect hole mobilities as high as 707 cm2 V−1 s−1 are reported, achieved using transfer‐free, low‐temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO2/Si. The Te nanostructures exhibit significantly higher device performance...
Two-dimensional materials, especially Transition Metal Dichalcogenide (TMDs), have emerged as a potential alternative to silicon for future electronic devices. We study the static out-of-plane dielectric constant for a range of single and bilayer two-dimensional materials. Dielectric response of these two-dimensional materials is studied using Density Functional Theory (DFT). Our calculations reveal...
In recent years, solar energy has established itself as one of the chief non-conventional energy sources, promising to be the energy source of the future. Owing to the impending energy crisis due to exhaustion of fossil fuels, it has become necessary to develop techniques that will help exploit solar energy in a better, more efficient way. This paper presents a photovoltaic system incorporating one...
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