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High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.
In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED's output-power is well controlled in the range of 0.5%~1.5%.
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs and GaAs. The active region...
The temperature dependent performance of VCSELs based on sub-monolayer (SML) InGaAs quantum dots (QDs) with fully doped AlGaAs/GaAs DBRs is presented. The SML QD VCSEL shows extreme temperature insensitivity under high speed operated in 2.125 Gb/s from -40degC~100degC. The continue-wave (CW) light-current (LI) output characteristics of the laser is also studied.
The InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively.
We have made MOCVD-grown InGaAs photonic crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic applications. Multi-mode InGaAs VCSELs have achieved a maximum power of over 1 mW. Single-mode characteristics of 0.18 mW of the PhC-VCSELs have been made by using the combined AlOx oxide layer with proton-implantion for better current confinement.
An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first demonstrated. Single fundamental mode CW output power of 3.8 mW has been achieved in the 990 nm range, with a threshold current of 1 mA. SMSR larger than 35 dB has been observed over entire operation range
High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl...
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