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There is a long-standing debate surrounding whether or not enhanced total internal reflection (ETIR) is possible. ETIR implies that the magnitude of the reflection coefficient is greater than unity and is conjectured to be possible when a field is incident from a lossless material to a gainy material beyond the critical angle. In this letter, we examine this problem through finite-difference time-domain...
For over four decades there has been disagreement over whether or not the reflection coefficient associated with total internal reflection (TIR) from a gainy material can have a magnitude greater than unity. Previously, FDTD simulations have shown the reflection coefficient can indeed have a magnitude greater than unity, i.e., amplified TIR is possible [Willis et al., Optics Express, 16(3):1903–1914,...
The characteristic scattering rate of doped silicon falls within the terahertz (THz) frequency band. Experimental characterizations have shown that for low and moderate doping densities (i.e. < 1018 cm−3) these materials cannot be adequately represented by the Drude model, which assumes that the electromagnetic frequency, ω, is much smaller than the scattering rate, τ−1 (T. I. Jeon and D. Grischkowsky,...
The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.
We present a multiphysics computational technique for calculating the THz-frequency conductivity in semiconductors and metals. This novel technique combines the ensemble Monte Carlo (EMC) simulation of carrier transport with the finite-difference time-domain (FDTD) solver of Maxwell's curl equations and the molecular dynamics (MD) technique for describing short-range Coulomb interactions between particles...
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