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3D technology will be the next step for the development of microelectronic devices. Vertical interconnection is one of the challenging issues. Cu/SiO2 patterned surface might be one of the possible techniques to address it. In this work, direct patterned Cu/SiO2 surfaces bonding at room temperature, atmospheric pressure and ambient air is demonstrated. High alignment and bonding quality is achieved...
This paper presents the latest results on electrical characterization of wafer to wafer structures made by direct copper bonding. The bonding was achieved at room temperature, atmospheric pressure and ambient air, followed by a 200°C or 400°C post bonding anneal. Description of the 3D integration process and the test-vehicle (which is used to evaluate the impact of bonding on Cu/Cu interface reliability)...
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