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Copper direct bonding technology is considered to be one of the most promising approach for matching the miniaturization needs of future 3D integrated high performance circuits (3D-IC). In this study, we discuss the recent achievements in copper direct bonding technology with oxide/copper mixed surface and present the latest electrical and physical characterizations of chip to wafer bonding structures...
The microelectronic industry has arrived at a crossroads. There is the challenge of continued Moore's Law scaling and the ever-growing consumer demand for smaller, faster electronics with extended and new functionalities. 3D integration is a promising and fast-growing field that addresses the convergence of Moore's Law and more than Moore. 3D integration offers a path for higher performance, higher...
Direct wafer bonding and thinning technologies are now extensively used in combination to produce SOI wafers (silicon-on-insulators) or innovative engineered substrates. Emerging demands of new functionalities at the material or device level for 3D integration have allowed increasing the level of maturity of these technologies. This paper will review the physics of wafer direct bonding and its implementation...
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