The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High-k gate dielectric integration had been one of the key technological boosters for 45 nm CMOS technology and beyond. Just a couple technology nodes after adopting the hafnium-based high-k materials, the high-k scaling have already lost its momentum. It is anticipated that the EOT scaling will be in the rate less than 0.03 nm reduction/generation in coming technology nodes. Putting aside the fabrication...
Lanthana (La 2 O 3 ) films were deposited by E-beam evaporation on n-Si(100). Conduction mechanisms for the as-deposited film have been investigated. In order to study the annealing effect of the as-deposited films on the conduction mechanisms, some films were annealed in an ex situ way at different temperatures with nitrogen or oxygen gas flow for 5 min. From current–voltage measurement...
In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300–500°C) in ultra-high vacuum (10 −10 –10 −9 Torr) for 90min. From the measurement...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.