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This paper reports on the design of a power amplifier covering the entire E-band satellite communication bands (71-76 GHz & 81-86 GHz) and demonstrating a high saturated output power of more than 1 W across this frequency range of interest. The circuit was fabricated by using an advanced 100 nm GaN high-electron-mobility transistor technology with an AlN-interlayer epitaxy, demonstrating a transit...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applications up to the Ka-band such as electronic warfare systems. The MMIC is based on a 100nm AlGaN/GaN T-gate HEMT microstrip transmission line technology with an fT > 80 GHz. The designed and fabricated amplifier uses the non-uniform distributed power amplifier topology and covers a frequency range...
In this paper, the fabrication and performance of common-source (CS) and common-gate transistors for operation at millimeter-wave frequencies are presented. The AlGaN/GaN devices have a gate length of 100 nm and yield a high maximum transconductance of above 550 mS/mm with a very low contact resistance of less than 0.12 . The baseline technology with its optimized epitaxial structures...
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