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A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single HJ TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission resonances that significantly improve the ON-state current (${I}_{\scriptscriptstyle {\text {ON}}}$ ). Coherent quantum transport simulation predicts that ${I}_{\scriptscriptstyle {\text {ON}}} = 460~\mu \textsf {A}/\mu \textsf {m}$ ...
The downscaling of electronic devices has reached a regime where quantum and atomistic effects govern the active part of the device while semi-classical physics still plays a very important role for the remaining parts. A multiscale transport simulation approach is therefore developed in NEMO5 tool to address this issue. In this approach, nonequilibrium Green's function (NEGF) equations with atomistic...
Future high-performance low-power integrated circuits require compact logic devices with both steep subthreshold swing (SS) and large drive current (ION). Tunneling field-effect transistors (TFETs) can meet the first requirement but their ION is severely limited either by the low source-channel tunneling probability or by the high source-to-drain tunneling leakage. One of the methods that can be employed...
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