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In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (VACNTs) were bonded to Au substrate as flip-chip interconnect, and the behaviors of the VACNT bumps under compression pressure were studied. In this model, it is considered that the VACNTs were deformed permanently by the friction among the VACNTs. In order to solve the cause of the permanent deformation of the VACNT bumps,...
Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (CNTs) were bonded to Au substrate as multilayer interconnect. In order to lower interconnect resistance between the CNT bumps and the Au substrate, the CNT bumps were covered with Au layer by Ar magnetron sputter, subsequently the CNT bumps and the Au substrates were bonded by surface activated bonding using Ar plasma...
This paper describes two examples of nano-packaging technology using surface activated bonding (SAB): vertical contact of CNTs via to metal substrate, and heterogeneous bonding such as Si-Si3N4 and Si-Al2O3 wafers. In the both cases, controlled layer in nanometer-scale of the interface is essential in achieving the desired characteristics of the bonded interface‥
In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 µm diameter and around 200 µm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load...
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