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A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of 4 × 0.8 × 5 μm2. Total chip size is 0.9 × 0.78 mm2. The doubler delivers a maximum output power of 10 dBm at 160 GHz. At the same frequency, the circuit exhibits a conversion gain up to 4 dB and a maximum output efficiency...
A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a doubler-amplifer chain in transferred-substrate InP-HBT technology, integrated on top of the BiCMOS wafer in a wafer-level Benzocyclobutene based bonding process. The VCO operates at 82 GHz with an output power of approximately...
This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with fT and fmax values of 376 GHz and 385 GHz, respectively, at an emitter size of 0.8 × 5 µm2. The transistors demonstrate more than 7 dB of gain at 96 GHz with good power densities of better than 3.7 mW/µm2. For...
This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with fT and fmax values of 376 GHz and 385 GHz, respectively, at an emitter size of 0.8 × 5 µm2. The transistors demonstrate more than 7 dB of gain at 96 GHz with good power densities of better than 3.7 mW/µm2. For...
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