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This work presents a characterization technique developed to study the gas sensitivity of dielectric powder in Radio Frequency (RF) domain for hydrogen sensing application at room temperature. The method is based on the measurement of S parameters of sample holder loaded with dielectric powder. The sample holder used is designed and adapted to fit in a gas test bench for materials characterization...
TiO 2 sol–gel layer has been deposited on single crystal sapphire (0001) substrate. Evolution of the layer microstructure with the thermal treatment in the range 100–1100°C has been studied using X-ray diffraction and X-ray reflectometry. TiO 2 layer density first increases with temperature up to 800°C and then decreases with the appearance of a high roughness finally leading to anatase...
The paper presents the characterization of a new microwave temperature compensated sapphire-rutile resonator oscillator. The oscillator frequency instability performances are better than 2 times 10-13 for tau < 1000s, and the frequency drift is estimated at 2.5 times10-12/day. These medium and long term results constitute, up to now, the state of the art for microwave temperature compensated sapphire...
A growing number of scientific or technical applications requires very high frequency stability oscillators. Thus a frequency stability of the order of 1×10−14 at short term is now required for metrology, future space programs and some tests of fundamental physics. Besides any reduction in oscillators phase noise will improve radar systems and phase noise measurement sensitivity. These new requirements...
Residual paramagnetic impurities are present in high quality sapphire crystal. This phenomenon was exploited as paramagnetic spin compensation at liquid helium temperature to build high Q cryogenic sapphire resonator oscillators (CSRO). In this paper we present the characterization of intentionally Ti3+ and Ti4+ doped sapphire resonator oscillators. For the Ti3+ resonator we used the 12.7 GHz mode...
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