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This paper describes suppression of current collapse by field-plate (FP) in AlGaN/GaN MOS-HEMTs. Current collapse reduction was confirmed for a multi-gate fingered MOS-HEMT with a total gate width of 10 mm. Moreover, we have fabricated a 5-A class MOS-HEMT with both gate-FP and source-FP (dual-FP), showing more complete suppression in current collapse as compared to that with only gate-FP.
The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.
This paper describes the effect of thickening Au-plated ohmic electrodes in AlGaN/GaN HEMTs on the drain current and on-resistance. By increasing the thickness of Au-plated ohmic electrodes up to 5 µm, the fabricated AlGaN/GaN HEMT with a total gate width from 2 to 10 mm exhibited an increase in the maximum drain current by about 50 % and a reduction in the on-resistance by more than 40 %.
In this paper we have investigated the relationship between off-state breakdown voltage and gate-to-drain distance (Lgd) for AlGaN/GaN HEMTs fabricated on a free-standing GaN substrate. The off-state breakdown voltage exhibited a linear increase up to Lgd of around 80 µm but saturated at about 4000 V when Lgd > 80 µm. Therefore, we proposed that when Lgd < 80 µm, the breakdown voltage of HEMTs...
This paper describes DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a free-standing GaN substrate. The three terminal breakdown voltage of the fabricated HEMT with a gate length of 3 µm exhibited a linear increase with increasing the gate-to-drain distance (Lgd), reaching more than 1200 V at Lgd=25 µm. It was found that the ON/OFF ratio in the drain current...
This paper describes fabrication and characterization of AlGaN/GaN HEMTs for large current operation. By depositing a 1000nm-thick Au metal on Ti/Al/Mo/Au source and drain ohmic contacts, a drain current of more than 4 amperes has been achieved with a total gate width of 10 mm. We discuss the dependence of saturation drain current on gate width in terms of Au thickness and source/drain ohmic electrode...
We have fabricated AlGaN/GaN high electron mobility transistors (HEMTs) with a multi-field-plate structure. An enhanced breakdown voltage was achieved by introducing a multi-field-plate to a conventional HEMT structure. This is the first report demonstrating enhanced breakdown characteristics by applying a bias voltage to the field-plate.
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