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EUV lithography is generally considered as the technology to take over from 193nm immersion lithography, but has been delayed due to a number of critical problems that remain to be solved. The purpose of this paper is to illustrate the improvements in process complexity, reduced design restrictions and reduced processing costs in case EUVL would be available for the 14nm logic node and beyond. We...
The NAND Flash memory is the most scaled device nowadays and it is the best candidate to keep pace with the Moore's Law. However, highly scaled memory dimensions decrease to the point where variability effects become the dominating showstoppers. Especially, the Line Edge Roughness (LER) is the dominating key parameter for NAND Flash memory electrical performance, the outcome of novel Lithography processes...
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