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Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be...
Copper Through-Silicon Via (Cu TSV) is becoming a key technology for three dimensional (3D) packaging and 3D integrated circuit (IC) applications. The microstructure of the Cu TSV is important as it not only affects the electrical properties, but ma y play a role in its reliability such as protrusion. In this study, physical vapor deposition (PVD) and electroplated (ECP) Cu TSV microstructure evolution...
RDL process becomes more and more important with through Si interposer (TSI) application in 3D packaging. RDL line/space needs to be shrinking with the increasing of device density. We had been developed low temperature (LT) damascene process for the RDL formation in 3D interposer integration. The sample failed at thermal reliability test. High temperature (HT) RDL was developed and demonstrated after...
In the current 3D integration technology, the control of wafer warp is needed to ensure uniform photolithography, good bonding areas and other major processes that requires flat wafer surface. In this paper, we found out that the wafer warpage was increased with increasing TSV density. The highest wafer warpage was observed after Cu annealing base on step by step warpage monitor. Wafer warpage reduction...
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