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This paper reports a 0-level or wafer-level thin film packaging technology for MEMS using polycrystalline silicon-germanium (poly-SiGe) as the base material complemented with a metal seal. Hermetic packages with a cavity pressure below 0.3mbar are demonstrated on a SOI-based torsional-mode Si resonator. Monitoring the quality factor of these resonators revealed that the low pressure is retained for...
We present an attractive poly-SiGe thin film packaging and MEM (Micro Electro-Mechanical) platform technology for integrating various packaged MEM devices above standard CMOS. The packages, having cavities as large as 1 mm2, make use of pillars designed to withstand subsequent molding during 1st level packaging. Covers on top of the release holes avoid deposition inside the cavity during sealing....
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