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A simple technology of 4H-SiC Schottky diode with oxide ramp termination is presented. The ramp is controlled by two undoped layers: an annealed (compact) oxide layer and as deposited layer, respectively.
A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4-20mA output current for ambient to maximum (400°C) input temperature was designed and tested.
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