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Influence of NiSi S/D incorporation on parasitic resistance (Rpara) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n+-Si contact resistance component...
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