The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Semiconductor packages with 23 um copper bond wires are decapsulated by an atmospheric pressure Microwave Induced Plasma (MIP). Potential damage to the copper bond wires due to fluorine or oxygen radicals in the plasma is investigated. Parameters like CF4 amount, input power level, and O2 addition that may influence the Si3N4 passivation etching rate are evaluated. Theory behind the changes in Si...
Decapsulation of plastic integrated circuit (IC) packages with copper wire bonding is achieved by using an atmospheric pressure microwave induced plasma. A thermal model is built to estimate the bulk IC package temperature under different plasma etching conditions. Temperature measurements of the plasma effluent and IC package are made to validate the model. Due to the low heat transfer rate from...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.