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1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
In this work, we present a methodology for calculating mobility of nano-scaled MOSFET's from the Boltzmann transport equation (BTE). Approximate solution of the BTE for electrons in nano-scaled MOSFET's is given, and the improved distribution function of the carriers is used to model the mobility of carriers. A new model is presented for two-dimensional characteristic field-dependent mobility. Comparing...
In this work, we present a methodology for calculating mobility of nano-scaled MOSFET's from the Boltzmann transport equation (BTE). Approximate solution of the BTE for electrons in nano-scaled MOSFET's is given, and the improved distribution function of the carriers is used to model the mobility of carriers. A new model is presented for two-dimensional characteristic field-dependent mobility. Comparing...
Based on the improved approximation of modified triangular potential well, a physical-based model of MOSFETs threshold voltage as well as its analytical formulation, considering quantum effects in strong inversion layer, is presented. The new model accounts for quantum effects for future generation MOS devices and integration circuits. The calculated results of the improved model obtained from this...
A novel polysilicon gate quantum effect model for MOSFET devices is presented. Only two fitting parameters are required to account for the polysilicon gate quantum effects. It is shown that neglecting the polysilicon gate quantum effects for nanoscale MOSFETs may lead to a lager error in gate capacitance. Comparing with the Medici simulated results validates the model
In this paper, a novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using an effective concept of dual-material gate (DMG), is proposed. The gate of the DMG-LDMOS consists of S-gate (the first gate approaching source with high workfunction material p+ poly) and D-gate (the second gate approaching drain with low workfunction material n+...
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