In this paper, a novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using an effective concept of dual-material gate (DMG), is proposed. The gate of the DMG-LDMOS consists of S-gate (the first gate approaching source with high workfunction material p+ poly) and D-gate (the second gate approaching drain with low workfunction material n+ poly). The MEDICI simulations reveal that the DMG-LDMOS can reduce the peak electric field of drain, enhance transconductance and breakdown voltage, which result in a more rapidly acceleration of carriers in the channel and a screening effect to suppress hot carrier effects