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For photovoltaic applications, the knowledge about system behaviour in real operating conditions is desirable. Presented paper describes the dependences of all important parameters of crystalline silicon (c-Si) cell and CIS photovoltaic mini-module on both temperature and irradiance obtained using cell tester Pasan IIc.
For photovoltaic cells efficiency is the quality of material key ingredient. Impurities in this material create recombination centers which cut down the effective carrier charge lifetime. The method of dark current measurement, which is described in paper, can be used for dominant impurity determination.
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