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Boron nanowire micro-patterns are prepared by CVD method. Ni film is chosen to be the catalyst for fabrication of boron nanowires. Patterned boron nanowires are found to have relatively lower turn-on field and good emission uniformity, which should have a promising future in FED area.
WO2 nanowires were grown on Cr/Al electrode on a 0.5 inch glass substrate at low temperature. Field emission properties were measured to investigate their future application in a field emission display devices. The WO2 nanowires are found to have a turn-on field of 9.8 MV/m and their emission current density can reach 1.6 mA/cm2 when the applied field is 14 MV/m. It suggests that they should have...
Tungsten oxide nanowires are integrated into gated wing-type field emission display (FED) devices, which are synthesized at low temperature of 550 °C by catalyzed-growth CVD way. The emission behaviors of the device are testified by transparent anode way to investigate their future application. These WO2 FED devices are found to have a turn-on field of 5.76 V/μm and their emission current density...
Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization...
W18O49 nanowires have demonstrated good field emission properties, such as low turn-on filed and high current density. However, their emission uniformity still needs improvement, which is an important issue for large area application such as field emission display. In present study, we reported an in-situ plasma treatment method using Ar and H2 to improve the emission uniformity of tungsten oxide...
AlN nanowires have low electron affinity, which has been considered as one of the ideal cathode materials in future. Although many methods have been developed to prepare AlN nanowires with different morphologies, little effort is found to focus on the patterned growth technique, which has limited their applicaitions. Here we provide a ceramic template method to fabricate patterned AlN nanowire arrays,...
Tungsten oxide nanowire is a very promising cathode nanomaterial, which has exhibited good emission properties. In most preparation methods, the growth temperature is higher than 800 °C, which is too high for application in field emission display which used glass as the substrate. Moreover, the selected-area growth of the tungsten oxide is also a challenge. Here we provide a simple method to fabricate...
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