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A comparison of the noise behavior of Double-Gate and Standard High Electron Mobility Transistors is established by means of Monte Carlo simulations. The intrinsic noise P, R, and C parameters are only moderately improved in the DG-device, but the extrinsic minimum noise figure NFmin reveals a significantly better extrinsic noise performance, more noticeable for higher frequencies due to the better...
The noise performance of InAlAs/InGaAs double-gate (DG) and standard high-electron-mobility transistors (HEMTs) is analyzed by means of an ensemble 2-D Monte Carlo simulator. The DG-HEMT is found to have a better noise behavior than the single-gate (SG) device. The results show a moderate decrease of the and noise parameters for the DG HEMT with respect to that of the SG device, since current fluctuations...
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