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One of the biggest challenges for high volume copper indium gallium (di)Selenide (CIGS) manufacturing is transitioning the R&D/pilot processes to a low cost high volume manufacturing process. The most important parameters in lowering the manufacturing cost of ownership (CoO) are module efficiency, low materials cost, high throughput and low capital expenditures. Veeco has developed a CIGS thermal...
A set of Ga1-xMnxAs epitaxial layers with variable Mn content xMn was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of xMn. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2times1018 cm-3. The ternary alloy formation...
Thermal annealing was used to investigate traps at the surface of AlGaN/GaN HFETs and Al2O3/AIGaN/GaN MOSHFETs. The C-V and static output and transfer measurement yielded nearly identical characteristics for unannealed and annealed structures, regardless whether unpassivated or gate-oxide structures were used. A strong influence of the annealing on the gate leakage current was observed. The leakage...
(100) GaAs substrate was patterned in 7H3PO4 (85% w/w):7H2O2 (30% w/w): IODI H2O via an etching mask with dynamic edges. The mask consisted of a resist layer, a Ti layer, a GaAs top layer, and an AlAs sacrificial layer. [0-11]-oriented stripe patterns were defined in the resist and Ti layers. At first, the top GaAs layer was etched via the resist /Ti mask. Once the solution cut via the AlAs layer,...
The paper reports on a study of MOVPE growth of InMnAs dots on patterned GaAs substrates. The substrates contained [0 1 1]-oriented mesas (of trapezoidal cross-section) and ridges (of triangular cross-section) confined to facets either close to {311}A and or close to {211}A crystallographic planes. MOVPE proved to be very useful for a controlled preparation of InMnAs dots on such substrates. The analysis...
A 400mum times 400mum sized square quantum-well infrared photodetector with 30 periods of the GaAs/Al0.3Ga0.7 As multiple quantum well has been prepared on patterned (001) GaAs substrate. The absorption spectrum at room temperature with normal incidence geometry is peaked at 9mum with a full width at half maximum (FWHM) of 3.7 mum. Dark current with influence of 300K background was measured at room...
A draping technique was tested to deposit AZ5214-E resist on non-planar (100)-oriented III-V substrates that contained various three-dimensional topographies. In each draping experiment, an AZ5214-E sheet was: (1) formed floating on the water surface, (2) lowered onto a non-planar substrate, and (3) draped over it during drying. Self-sustained and conformal AZ5214-E layers were formed over the non-planar...
An MSM Schottky barrier photodetector based on p-type In/sub 0.53/Ga/sub 0.47/As suitable for detection in the 0.8-1.7 wavelength range is reported. Aluminium metallisation was used. The large area devices exhibited responsivity of about 0.4 A/W at 1.3 mu m and tau /sub on/<or=300 ps.<<ETX>>
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