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One-transistor dynamic random access memory (1T-DRAM) thin-film transistor (TFT) could lead the revolution of system-on-panel application. However, no useful 1T-DRAM is fabricated on the polysilicon (poly-Si) thin film up to now. In this letter, we present a novel method to fabricate a smiling poly-Si TFT for 1T-DRAM applications. The experimental results show that the short-channel effects can be...
We present a reliability analysis of a new vertical MOSFET with the middle partial insulation and block oxide (bMPI) structure for 1T-DRAM applications. The proposed 1T-DRAM device can increase the pseudo-neutral region due to the bMPI under the vertical channel and its device sensing current window is improved by about 95% when compared to the planer bMPI 1T-DRAM. Owing to the double-gate structure,...
In this paper, we study the thermal characteristics of the bMPI-based 1T-DRAM cell. For a bMPI-FET, it can not only improve the thermal stability about 38% compared with the bPDSOI-FET due to the S/D-tied scheme, but also maintain the desired short-channel characteristics due to the block oxide structure.
This paper proposes a new self-aligned process to form the silicon-on-insulator with block oxide. Based on the TCAD simulation, we have proved that the new process can get excellent short-channel effects immunity compared to the previous process [1]. Also, the new process can overcome the problem of the previous one, which can not be used on the thin BOX devices, so that the application of the block...
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