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This paper aims to investigate the performance and reliability trade-off of the self-aligned (SA) pi-shaped source/drain (S/D) ultrathin silicon-on-insulator (UTSOI) field-effect transistors (FETs). Based on the simulations, the S/D-tie effects are crucial to the future of quasi-SOI devices. The preliminary results of electrical characteristics of the SA-piFETs are carefully demonstrated.
In this paper, we examine the current-voltage (IV) and capacitance-voltage (CV) characteristics of self-aligned (SA), planar block oxide (BO) metal-oxide semiconductor field-effect transistors (MOSFETs) using technology computer-aided design (TCAD) tools. For the first time, a comparison of the different types of BO MOSFETs, such as fully depleted silicon-on-insulator (FDSOI) FET with BO (bFDSOI),...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
This work aims to examine and analyze carefully the effects of block oxide length (LBO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs)...
In this paper, the influence of block oxide width (WBO) variations on a newly designed 40-nm gate-length silicon-on-partial-insulator field-effect transistor with block oxide (bSPIFET) was demonstrated and characterized. By utilizing the block oxide (BO) enclosing the sidewall of the Si body, the charge sharing from the source/drain (S/D) regions for a bSPIFET can be significantly reduced. Essentially,...
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