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Heterostructure microwave beam lead p-i-n diodes are developed. Parameters of diodes were measured in a frequency range from 0.1 to 40 GHz. Insertion loss does not exceed 0.35 dB (I=10 mA). The diode capacitance was 30 fF. It is shown that diodes intensively radiate light with wave-lengths of 900-910 nanometers.
The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
This paper presents results of design and fabrication of monolithic microwave integrated circuit (MMIC) Schottky diode limiter. These limiters have a small size and technological compatibility with ion-implanted low-noise field-effect transistors. The experimental characteristics are given.
The paper presents the design and performance of broadband monolithic GaAs p-i-n diode limiter. MIC has low-signal insertion loss. The leakage power of the limiter is about 16.5 dBm and it can handle CW power level up to 37 dBm.
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