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Low loss and high linearity antenna switch is designed and implemented using 0.18 μm silicon-on-insulator(SOI) CMOS process for GSM/WCDMA mobile phone front-ends. Body-contacts(BC) NFETs from partially depleted (PD) SOI were chosen to implement low loss and high power antenna switch. The antenna switch employs a conventional multi-stacking FET structure to distribute voltage stress toward each FETs...