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Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn‐on field of 14.3 V μm−1, attaining FEE current density of 2.58 mA cm−2 and life‐time stability of 105 min. Transmission...
Inductively coupled plasmas (ICP) employing linear antennas have gained a great deal of interests recently for applications in large area plasma processing tools. On the other hand, plasma sources operated in pulsed mode are also very attractive since they allow a wider range of tunability of relative concentration of reactive species and/or plasma uniformity. In this work, we experimentally characterized...
Measurement of plasma density, a key parameter that control the property of processing plasmas and hence the processing results, has been the focus of extensive studies in recent years, not only for characterization of the plasmas but also for development of tools for monitoring of the plasma based processes1.Inthis study, a miniature Plasma Absorption probe (mini-PAP)[2] of outer diameter 0.9 mm,...
Si-C:H film has attracted a lot of attention recently for application in Si-based thin film solar cells, since its bandgap can be easily tunable over a range of 1.5–2.5 eV by simply varying the Si to C ratio in the film. Capacitively coupled SiH4/CH4/H2 plasmas are often employed for deposition of high quality Si-C:H film. A better understanding of the physical and chemical mechanisms in the plasma...
Capacitively coupled SiH4/H2 plasmas have been widely employed for deposition of Si film for applications such as thin film transistors and thin film solar cells. For Si thin film solar cells, requirements for yielding higher conversion efficiency at a lower cost calls for a high rate and high uniformity plasma process for deposition of microcrystalline Si film. A better understanding of the plasma...
Summary form only given. Here we report the development of microwave interferometers based on transmission-line (TL) structures for monitoring of plasma density for applications in process monitoring or realtime feedback control of plasma based semiconductor fabrication tools, such plasma etchers or PECVDs. The principle of this technique is the same as the conventional microwave interferometers except...
Atmospheric pressure plasma jet (APPJ) has attracted a great deal of attention recently because its atmospheric pressure operation minimize the need for high cost vacuum system and thus allows a wide range of applications, e.g., surface modification, thin film synthesis, and bio-medical treatments, etc., at low cost. Although experimental works have been demonstrated extensively, along with numerical...
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