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Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its superior material properties over silicon for high-temperature applications. Among the high-voltage SiC power devices, the 4H-SiC gate turn-off thyristor (GTO) offers excellent current handling, very high voltage blocking, and fast turn-off capabilities...
We present our latest developments in ultra high voltage 4H-SiC IGBTs. A 4H-SiC P-IGBT, with a chip size of 6.7 mm × 6.7 mm and an active area of 0.16 cm2 exhibited a record high blocking voltage of 15 kV, while showing a room temperature differential specific on-resistance of 24 mΩ-cm2 with a gate bias of −20 V. A 4H-SiC N-IGBT with the same area showed a blocking voltage of 12.5 kV, and demonstrated...
The need for power semiconductor devices capable of high-voltage, high-frequency, and high-temperature operation has been continuously growing, especially for energy conversion system and related power grid applications. However, current power converters built with silicon switches are quite bulky and inefficient, making their utilization difficult in practical energy conversion and power grid systems...
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