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100 mm diameter 4H-SiC High Purity Semi-insulating substrates are now being manufactured in high volume. GaN HEMT layers grown on 100 mm SiC substrates have shown excellent sheet resistivity and AlGaN thickness uniformities (σ/mean) of 1.3 and 1.1%, respectively. The fabrication process for MMIC manufacture was adapted to the larger diameter substrates without requiring any change to the process design...
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