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Two subharmonically pumped 210 GHz I/Q mixer MMICs have been successfully realized in a 100 nm gate length metamorphic high electron mobility transistor (mHEMT) technology. The mixers have been designed using a branchline and a Lange coupler to generate the 90° phase shift between the I and Q ports. A conversion gain of more than 19 dB has been achieved with both mixers. The measured LO to RF isolation...
In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT technology. The receiver contains a low noise amplifier (LNA), mixer and LO multiplier chain integrated into a single monolithic microwave integrated circuit (MMIC). The circuit is packaged into a waveguide block, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandwidth of more than 100 GHz has been successfully developed in a 50 nm mHEMT technology. The mixer achieves a measured conversion loss of 17 dB. The measured LO-to-RF isolation is better than 17 dB in the relevant frequency range. Two Lange couplers are used to balance the design. The IF signal is tapped...
A wideband 260 to 304 GHz (H-band) heterodyne receiver is formed by an MMIC chip set cascading a low-noise amplifier, resistive mixer with integrated frequency-doubler, LO power amplifier and frequency-multiplier-by-six. All MMICs use active circuit concepts and are realized in 100 and 50 nm gate-length metamorphic HEMT technology. The balanced active frequency-multiplier-by-six provides 0 dBm of...
This paper presents two low-noise amplifiers in D-band (110-170 GHz) using metamorphic high electron mobility transistor (mHEMT) technology with gate lengths of 100 nm and 50 nm for applications in passive millimeter-wave imaging. Both amplifiers consist of four transistor stages with a gate width of 2 × 15 μm, each. The chip sizes are 1.0 × 2.0 mm2. The circuit design and the impedance matching networks...
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