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The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (Tinv) as a result of stronger charge and surface roughness scattering at thinner SiOx interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at Tinv...
This work demonstrates the successful integration of 0.85nm-EOT Si0.45Ge0.55-pFETs using a gate first approach. An in-depth analysis, ranging from capacitor-level up to circuit-level is carried out, with systematic benchmarking to a conventional Si-channel reference. Outperforming the state-of-the-art Si0.55Ge0.45-pFETs, an ION of 630μA/μm at LG_POLY = 35nm with IOFF = 100nA/μm and VDD = -1V has been...
This paper is the first to provide a comprehensive study on the layout dependence of scaled Si1-xGex-channel pFETs. Drive current enhancement up to 90% is demonstrated for Si0.55Ge0.45-channel pFETs with LG = 35 nm and EOT = 0.9 nm when the transistor width (W) is scaled from 10 μm to 110 nm. This is attributed to a change in channel stress from biaxial compressive at large W to the more beneficial...
Easily integrable cost effective gate first Single Metal Single Dielectric (SMSD) solution based on As implantation into TiN/HfO2 with ~1 nm EOT is presented. A consistent n-type shift of 250 mV down to 35 nm Lg is obtained by As I/I compared to the reference stack. Symmetrical threshold voltages (~ plusmn0.5 V) are met for the bulk planar devices using this technique, which would corresponds to low-V...
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